A fourfold coordinated point defect in silicon.
نویسندگان
چکیده
Vacancies, interstitials, and Frenkel pairs are considered to be the basic point defects in silicon. We challenge this point of view by presenting density functional calculations that show that there is a stable point defect in silicon that has fourfold coordination and is lower in energy than the traditional defects.
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ورودعنوان ژورنال:
- Physical review letters
دوره 88 23 شماره
صفحات -
تاریخ انتشار 2002